Munich, Germany

Hutomo Suryo Wasisto

This inventor holds 1 USPTO granted patent and 8 published patent applications and 2 EPO patents. Top assignee: Infineon Technologies Ag. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hutomo Suryo Wasisto. Retrieved from https://idiyas.com/inventor/hutomo-suryo-wasisto

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

 

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Hutomo Suryo Wasisto and MEMS Pressure Transducer Innovation.

Introduction

Hutomo Suryo Wasisto is an inventor associated with Munich, Germany, and Infineon Technologies AG. His patent work concerns a MEMS pressure transducer design that incorporates a hybrid environmental barrier structure.

Latest Patents

Wasisto is associated with 1 patent: “Pressure transducer device with hybrid barrier structure and method for manufacturing same.” The disclosed manufacturing method provides a substrate with at least one membrane, forms a stepped recess between the membrane and the opposite substrate surface, and places an environmental barrier structure inside the wider of two adjacent recesses. The stepped geometry is intended to integrate the barrier into the pressure transducer chip.

Career Highlights

His listed company affiliation is Infineon Technologies AG. The patent reflects work on MEMS pressure-sensor fabrication and the integration of protective structures into a transducer substrate.

Collaborations

The provided information identifies Sebastian Anzinger and Dominic Maier as Wasisto’s coworkers. Their names are included here as professional associations; the available details do not specify their roles in the patent.

Conclusion

Hutomo Suryo Wasisto’s listed patent focuses on a hybrid barrier structure for MEMS pressure transducers, connecting his work at Infineon Technologies AG with sensor-device manufacturing innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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