The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Nov. 17, 2023
Infineon Technologies Ag, Neubiberg, DE;
Hutomo Suryo Wasisto, Munich, DE;
Marc Füldner, Neubiberg, DE;
Dominic Maier, Pleystein, DE;
Andreas Wiesbauer, Pörtschach a. W., AT;
Sebastian Anzinger, Miesbach, DE;
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Abstract
A method for manufacturing a MEMS pressure transducer chip with a hybrid integrated environmental barrier structure includes a step of providing a substrate comprising at least one membrane, a step of structuring a stepped recess structure into the substrate, the stepped recess structure comprising a first recess having a first lateral width and an adjacent second recess having a larger second lateral width, where the stepped recess structure extends between the membrane and a substrate surface opposite to the membrane, and a step of arranging an environmental barrier structure inside the second recess.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile