Huping Ju

Title: Huping Ju: Innovator in Silicon-on-Insulator Technology

Introduction

Huping Ju is a notable inventor based in Hefei, China. He has made significant contributions to the field of semiconductor technology, particularly with his innovative work on silicon-on-insulator metal-oxide-semiconductor field-effect transistors (SOI MOSFETs). His research and inventions have the potential to advance the efficiency and performance of electronic devices.

Latest Patents

Huping Ju holds a patent for a silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure. This invention includes a substrate layer, a buried oxide layer made of SiO, and an active zone positioned on the upper surface of the buried oxide layer. The structure also features a source electrode and a drain electrode on the active zone, a gate dielectric layer between the electrodes, and a gate electrode within the dielectric layer. Additionally, a heat conduction column penetrates the buried oxide layer, dissipating heat in the active zone to maintain optimal lattice temperature and prevent current decrease at the drain electrode.

Career Highlights

Huping Ju is affiliated with Anhui University, where he continues to engage in research and development in semiconductor technologies. His work has garnered attention for its innovative approach to improving the performance of MOSFET structures.

Collaborations

Huping Ju collaborates with esteemed colleagues, including Xingang Ren and Wei Zhi. Their combined expertise contributes to the advancement of research in the field of semiconductor technology.

Conclusion

Huping Ju's contributions to the development of silicon-on-insulator technology highlight his role as an influential inventor in the semiconductor industry. His innovative patent demonstrates the potential for improved electronic device performance through advanced transistor structures.