The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Mar. 27, 2024
Anhui University, Hefei, CN;
Xingang Ren, Hefei, CN;
Wei Zhi, Hefei, CN;
Huping Ju, Hefei, CN;
Zhixiang Huang, Hefei, CN;
Gang Wang, Hefei, CN;
Kaikun Niu, Hefei, CN;
Siliang Wang, Hefei, CN;
Yingsong Li, Hefei, CN;
Xianliang Wu, Hefei, CN;
Sungen Cao, Hefei, CN;
Anhui University, Hefei, CN;
Abstract
A silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure is provided, including a substrate layer; a buried oxide layer which is arranged on an upper surface of the substrate layer and is made of SiO; an active zone which is arranged on an upper surface of the buried oxide layer; a source electrode and a drain electrode which are arranged on an upper surface of the active zone; a gate dielectric layer which is arranged between the source electrode and the drain electrode; a gate electrode which is provided in the gate dielectric layer; and a heat conduction column which penetrates through the buried oxide layer, and its top wall is in contact with the active zone. The heat conduction column dissipates heat in the active zone, resulting in a lattice temperature of the active zone will not increase extremely and avoiding a decrease of a current of the drain electrode.