Anhui University

Huping Ju

Zhixiang Huang

Xingang Ren

Yingsong Li

Kaikun Niu

Xianliang Wu

Siliang Wang

Gang Wang

Wei Zhi

Sungen Cao

A silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure is provided, including a substrate layer; a buried oxide layer which is arranged on an upper surface of the substrate layer and is made of SiO; an active zone which is arranged on an upper surface of the buried oxide layer; a source electrode and a drain electrode which are arranged on an upper surface of the active zone; a gate dielectric layer which is arranged between the source electrode and the drain electrode; a gate electrode which is provided in the gate dielectric layer; and a heat conduction column which penetrates through the buried oxide layer, and its top wall is in contact with the active zone. The heat conduction column dissipates heat in the active zone, resulting in a lattice temperature of the active zone will not increase extremely and avoiding a decrease of a current of the drain electrode.

Silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure

Growing community of inventors

Hefei, China

Huping Ju