Huoy-Jong Wu

Title: Huoy-Jong Wu: Innovator in Integrated Circuit Fabrication

Introduction

Huoy-Jong Wu is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of integrated circuit fabrication, particularly in the development of Dynamic Random Access Memory (DRAM) technologies. With a total of 7 patents to his name, Wu's work has had a lasting impact on the electronics industry.

Latest Patents

One of Huoy-Jong Wu's latest patents focuses on a method for fabricating an integrated circuit with a transistor electrode. This innovation addresses the formation of DRAM cells in a P well created within a biased deep N well (DNW). The design allows for PMOS transistors to be formed in N wells, while the NMOS channels stop implant mask is modified to prevent interference from the N+ contact region used for DNW biasing. This method eliminates the minimal spacing requirement between the well of an integrated circuit and adjacent circuitry, enhancing the layout efficiency of DRAMs and other integrated circuits.

Career Highlights

Throughout his career, Huoy-Jong Wu has worked with notable companies, including Mosel Vitelic Corporation. His expertise in integrated circuit technology has positioned him as a key figure in the advancement of memory storage solutions.

Collaborations

Wu has collaborated with esteemed colleagues such as Kuo-Tung Sung and Li-Chun Li. These partnerships have contributed to the successful development of innovative technologies in the field of electronics.

Conclusion

Huoy-Jong Wu's contributions to integrated circuit fabrication and his innovative patents have significantly influenced the electronics industry. His work continues to pave the way for advancements in memory technology and integrated circuit design.