Company Filing History:
Years Active: 2023-2025
Title: Huolin Huang: Innovator in High-Temperature Semiconductor Technology
Introduction
Huolin Huang is a prominent inventor based in Dalian, China. He has made significant contributions to the field of semiconductor technology, particularly in high-temperature applications. With a total of 3 patents, his work showcases innovative solutions that address the challenges faced in modern electronics.
Latest Patents
One of Huolin Huang's latest patents is the "Cross-shaped high-temperature three-dimensional Hall sensor and preparation method thereof." This invention features a unique design that includes X, Y, and Z columns made from third-generation semiconductor materials. The vertical connection of these columns allows for efficient operation in high-temperature environments, significantly reducing the sensor's volume compared to traditional Hall sensors.
Another notable patent is the "High-threshold-voltage normally-off high-electron-mobility transistor and preparation method therefor." This high-electron-mobility transistor (HEMT) incorporates a nucleation layer and an epitaxial layer grown on a substrate. The innovative design includes a heterojunction structure that generates a two-dimensional electron gas, enhancing the device's performance in various applications.
Career Highlights
Huolin Huang is affiliated with Dalian University of Technology, where he continues to advance research in semiconductor technologies. His work has garnered attention for its practical applications and contributions to the field.
Collaborations
He has collaborated with notable colleagues, including Zhonghao Sun and Hui Zhang, further enriching his research endeavors and expanding the impact of his inventions.
Conclusion
Huolin Huang's innovative work in high-temperature semiconductor technology positions him as a key figure in the field. His patents reflect a commitment to advancing technology and addressing the needs of modern electronics.