Dalian University of Technology

Huolin Huang

Hui Zhang

Zhonghao Sun

Kaiming Ma

A cross-shaped high-temperature three-dimensional Hall sensor includes the X column, the Y column and the Z column all made of third-generation semiconductor materials. The X column, the Y column and the Z column are vertically connected to each other. An electrode C1 and an electrode C2 are respectively arranged at two ends of the Z column. An electrode C3 and an electrode C4 are respectively arranged at two sides of the Y column. An electrode C5 and an electrode C6 are respectively arranged at two sides of the X column. The current description uses the excellent high temperature performance of the third generation semiconductor to make the sensor work in the high temperature environment, the new structure greatly reduces the volume compared with the other device packaging combined Hall sensor, and makes the sensor work in very narrow space.

Cross-shaped high-temperature three-dimensional hall sensor and preparation method thereof

A high-threshold-voltage normally-off high-electron-mobility transistor (HEMT) includes a nucleation layer and an epitaxial layer are grown sequentially on a substrate; a barrier layer, a source, and a drain above the epitaxial layer; the barrier layer and the epitaxial layer form a heterojunction structure, and the contact interface therebetween is induced by polarization charges to generate two-dimensional electron gas. The HEMT includes a passivation layer above the barrier layer; a gate cap layer above the gate region barrier layer; the upper part of the gate cap layer is subjected to surface plasma oxidation to form an oxide dielectric layer, or a single-layer or multiple gate dielectric insertion layer is directly deposited thereon. The HEMT includes a gate is located above the gate dielectric insertion layer; the gate is in contact with the passivation layer; and a field plate extends from the gate to the drain on the passivation layer.

High-threshold-voltage normally-off high-electron-mobility transistor and preparation method therefor

A high-temperature three-dimensional Hall sensor with a real-time working temperature monitoring function includes a buffer layer, an epitaxial layer, and a barrier layer sequentially grown on a substrate. A high-density two-dimensional electron gas is induced by polarization charges in a potential well at an interface of heterojunctions of the epitaxial layer. A lower surface of the substrate includes a vertical Hall sensor for sensing a magnetic field parallel to a surface of a device. An upper surface of the barrier layer includes a 'cross' horizontal Hall sensor for sensing a magnetic field perpendicular to the surface of the device.

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Dalian, China

Huolin Huang