Hsinchu, Taiwan

Hung-Yueh Lu

This inventor holds 1 USPTO granted patent. Top assignee: Promos Technologies, Inc. Active years: 2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hung-Yueh Lu. Retrieved from https://idiyas.com/inventor/hung-yueh-lu-cel52911

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2002

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Innovations by Inventor Hung-Yueh Lu

Introduction

Hung-Yueh Lu is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative work focuses on improving the etching processes used in metal patterning.

Latest Patents

Hung-Yueh Lu holds a patent for a method aimed at reducing defects in metal etching. The patent, titled "Defects reduction for a metal etcher," describes a comprehensive four-step etching process. This process involves the use of various gases to create and remove polymer layers that form on the sidewalls of metal lines during the etching process. The method enhances the quality and precision of semiconductor structures.

Career Highlights

Hung-Yueh Lu is currently employed at Promos Technologies, Inc. His work at the company has been instrumental in advancing semiconductor manufacturing techniques. He has demonstrated a strong commitment to innovation and excellence in his field.

Collaborations

Hung-Yueh Lu has collaborated with notable colleagues, including Ray C Lee and Hong-Long Chang. These partnerships have contributed to the development of cutting-edge technologies in semiconductor processing.

Conclusion

Hung-Yueh Lu's contributions to the semiconductor industry through his innovative patent and collaborative efforts highlight his role as a key inventor in the field. His work continues to influence advancements in technology and manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…