Hung-Yu Zeng

Title: Innovations of Inventor Hung-Yu Zeng

Introduction

Hung-Yu Zeng is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the etching methods for nitride semiconductors. His work is recognized for its innovative approach and practical applications in the industry.

Latest Patents

Hung-Yu Zeng holds a patent for an etching method for nitride semiconductors. The invention discloses a process where a dielectric layer is formed on gallium nitride. A line pattern or dot pattern is created on the dielectric layer through exposure, development, and etching processes. This dielectric layer serves as a mask for the epitaxial lateral overgrowth of a subsequent gallium nitride layer. A thick gallium nitride film is then grown on the dielectric layer. Following this, a wet etching process is employed to remove the dielectric layer, allowing the thick gallium nitride film to be etched into the specific shape required.

Career Highlights

Hung-Yu Zeng is affiliated with National Yang Ming Chiao Tung University, where he continues to advance his research and development in semiconductor technologies. His work has garnered attention for its potential impact on the industry.

Collaborations

He has collaborated with notable colleagues such as Wei-I Lee and Hsin-Hsiung Huang, contributing to various research projects and innovations in the field.

Conclusion

Hung-Yu Zeng's contributions to semiconductor technology through his innovative etching methods highlight his role as a significant inventor in the industry. His work continues to influence advancements in nitride semiconductor applications.