The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
Sep. 04, 2007
Applicants:
Wei-i Lee, Hsinchu, TW;
Hsin-hsiung Huang, Hsinchu, TW;
Hung-yu Zeng, Hsinchu, TW;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention discloses etching method for the nitride semiconductor. Firstly dielectric layer is formed on gallium nitride. The line pattern or dot pattern is formed on the dielectric layer by using the exposure, development, and etching processes. The dielectric layer is used as the mask for the epitaxial lateral overgrowth of follow-up gallium nitride layer. The thick gallium nitride film is grown on the dielectric layer. Then the wet etching process is used to remove the dielectric layer, and the thick gallium nitride film on the dielectric layer is etched to form the specific shape as required.