Hung-Yu Yen

Title: Hung-Yu Yen and Semiconductor Contact Innovation.

Introduction

Hung-Yu Yen is an inventor associated with Taipei, Taiwan, and Taiwan Semiconductor Manufacturing Co., Ltd. His patent work addresses transistor contact structures and methods for forming them.

Latest Patents

The provided information lists one patent for Yen: “Transistor Contacts and Methods of Forming the Same.” The disclosed method forms a sacrificial spacer in a contact opening that exposes a source/drain region, then deposits a spacer layer and protective dielectric. After removing the sacrificial spacer, material from the dielectric and spacer layer is redeposited to form a cap that seals part of a recess and leaves a void. This approach describes a way to shape and protect features within a transistor contact. Yen is credited with 1 patent in the information provided.

Career Highlights

Yen’s listed patent reflects work on semiconductor device fabrication, particularly the formation of transistor contacts and dielectric structures. The supplied information associates him with Taiwan Semiconductor Manufacturing Co., Ltd.

Collaborations

Keng-Chu Lin is identified as Yen’s coworker. The provided details do not specify whether Lin collaborated on the patent.

Conclusion

Hung-Yu Yen’s listed invention focuses on a transistor-contact fabrication method that uses a dielectric cap and sealed void, highlighting a specific contribution to semiconductor manufacturing.