The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Mar. 31, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Hung-Yu Yen, Taipei, TW;

Keng-Chu Lin, Ping-Tung, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 62/121 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 64/017 (2025.01); H10D 84/0167 (2025.01); H10D 84/017 (2025.01); H10D 84/0184 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01);
Abstract

In an embodiment, a method includes: forming a sacrificial spacer in a contact opening, the contact opening exposing a source/drain region; depositing a spacer layer on a sidewall of the sacrificial spacer and on a top surface of the source/drain region; forming a protective dielectric on the spacer layer and in the contact opening; removing the sacrificial spacer to form a recess adjacent the spacer layer; and forming a dielectric cap in an upper portion of the recess by redepositing a material of the protective dielectric and a material of the spacer layer in the upper portion of the recess, the dielectric cap sealing a lower portion of the recess to form a void.


Find Patent Forward Citations

Yen, Hung-Yu. (2026). Transistor contacts and methods of forming the same (U.S. Patent No. 12666667). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12666667

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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