Company Filing History:
Years Active: 2001
Title: Innovations of Inventor Hung-Yu Kou
Introduction
Hung-Yu Kou is a notable inventor based in Hsinchu Hsien, Taiwan. He has made significant contributions to the field of semiconductor technology. His work focuses on methods that enhance the fabrication processes of semiconductor devices.
Latest Patents
Hung-Yu Kou holds a patent for a "Method of fabricating self-aligned silicide." This invention is directed towards a method of fabricating a self-aligned silicide on the gate electrode and source/drain region of a semiconductor device. The process begins with providing a semiconductor substrate that has a gate oxide layer and a polysilicon layer. A first silicide layer is then formed on the polysilicon layer. The substrate is patterned and etched to create a gate structure. A spacer is formed on the sidewall of the gate structure, and the source/drain region is formed adjacent to it. Finally, a metal layer is applied to the surface of the substrate, followed by a thermal process that converts portions of the metal layer on the gate structure and source/drain region into self-aligned silicide. This innovation is crucial for improving the efficiency and performance of semiconductor devices.
Career Highlights
Hung-Yu Kou is currently associated with United Semiconductor Corporation, where he continues to develop and refine semiconductor technologies. His expertise in the field has led to advancements that benefit the industry.
Collaborations
Hung-Yu Kou has worked alongside his coworker, Chih-Ching Hsu, contributing to various projects and innovations in semiconductor technology.
Conclusion
Hung-Yu Kou's contributions to the semiconductor industry through his innovative patent demonstrate his commitment to advancing technology. His work continues to influence the development of efficient semiconductor devices.