Hung-Tse Chen

Title: Innovations of Inventor Hung-Tse Chen

Introduction

Hung-Tse Chen is a prominent inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of light-emitting diodes and memory cell fabrication methods. With a total of 8 patents to his name, Chen's work has had a substantial impact on modern electronics.

Latest Patents

One of Chen's latest patents is for a light-emitting diode (LED) that includes a first-type doped GaN substrate, a first-type doped semiconductor layer, an active layer, a second-type semiconductor layer, and both a first and second electrode. This innovative design allows for improved efficiency and performance in LED technology. Another notable patent involves a method of fabricating a memory cell, which includes forming a control gate on a substrate, creating a dielectric layer, and utilizing a laser annealing process to oxidize an α-SiGe layer into a silicon oxide layer. This method effectively separates Ge atoms to form a Ge quantum dot layer, enhancing the functionality of memory cells.

Career Highlights

Hung-Tse Chen has worked with esteemed organizations such as the Industrial Technology Research Institute and Walsin Lihwa Corporation. His experience in these institutions has allowed him to collaborate on various cutting-edge projects, further advancing his expertise in semiconductor technologies.

Collaborations

Chen has collaborated with notable colleagues, including Yu-Cheng Chen and Chi-Lin Chen. Their joint efforts have contributed to the successful development of innovative technologies in their respective fields.

Conclusion

Hung-Tse Chen's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a leading inventor. His work continues to influence advancements in electronics and memory technology.