Industrial Technology Research Institute

Walsin Lihwa Corporation

Hung-Tse Chen

Yu-Cheng Chen

Chi-Lin Chen

Fang-Tsun Chu

Yi-Keng Fu

Chia-Lung Tsai

Jia-Xing Lin

Chih-Hsuen Chou

A light emitting diode (LED) including a first-type doped GaN substrate, a first-type doped semiconductor layer, an active layer, a second-type semiconductor layer, a first electrode, and a second electrode is provided. The first-type doped GaN substrate has a first doped element. The first-type semiconductor layer is disposed on the first-type doped GaN substrate. The first-type semiconductor layer has a second doped element different from the first doped element, and the doped concentration of the second doped element&#x2014;may have a peak from 3E/cmto 1E/cmat an interface between the first-type doped GaN substrate and the first-type semiconductor layer. The active layer is disposed on the first-type semiconductor layer, and the second-type semiconductor layer is disposed on the active layer. The first electrode and the second electrode are respectively disposed on the first-type doped GaN substrate and the second-type semiconductor layer. Other LEDs are also provided.

Light emitting diode

A method of fabricating a memory cell includes following steps. First, a substrate is provided, and a control gate is formed on the substrate. Then, a dielectric layer is formed to cover the control gate and the substrate. Afterward, an &#x3b1;-SiGe layer is formed on the dielectric layer. After that, a laser annealing process is performed to oxidize the &#x3b1;-SiGe layer into a silicon oxide layer, so as to separate out Ge atoms from the &#x3b1;-SiGe layer to form a Ge quantum dot layer between the silicon oxide layer and the dielectric layer. A poly-Si island is then formed on the silicon oxide layer, wherein the poly-Si island includes a source doped region, a drain doped region, and a channel region located therebetween.

Method of fabricating memory cell

A memory cell suitable for being disposed over a substrate is provided. The memory cell includes a poly-silicon island, a first dielectric layer, a trapping layer, a second dielectric layer and a control gate. The poly-silicon island is disposed on the substrate and includes a source region, a drain region and a channel region located between the source and drain regions. The channel region has a plurality of regularly arranged tips thereon. The first dielectric layer is disposed on the poly-silicon island. The trapping layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the trapping layer. The control gate is disposed on the second dielectric layer. The memory cell mentioned above can be integrated into the LTPS-LCD panel or OLED panel.

Pixel structure

A method for manufacturing a thin film transistor ('TFT') array includes providing a substrate, a patterned first metal layer on the substrate including a plurality of first conductive lines and a plurality of second conductive lines disposed orthogonal to the first conductive lines, an insulating layer over the patterned first metal layer, a patterned silicon layer, a patterned passivation layer over the patterned silicon layer, and a patterned doped silicon layer and a patterned second metal layer over the patterned passivation layer, filling exposed portions of the patterned silicon layer and exposed portions of the first conductive lines and the second conductive lines, where the patterned second metal layer includes a plurality of third conductive lines and a plurality of fourth conductive lines, each of which corresponding respectively to one of the plurality of first conductive lines and the plurality of second conductive lines.

Method for manufacturing thin film transistor display array with dual-layer metal line

In the present invention, a method is used for forming a poly-silicon film that uses sequential lateral solidification (SLS) with two laser irradiations using a mask for patterning the laser beam so as to increase the grain length. The method also achieves enhancing the throughput due to the use of a mask that is designed for the method.

Method for forming poly-silicon film

Fabrication process of memory cell

A silicon layer and a heat-retaining layer are formed on a substrate in turn, and a laser beam with a sharp energy density gradient is next utilized to perform a laser heating process for inducing super lateral growth crystallization occurred in part of the Si layer. The heat-retaining layer provides additional heating-enhancement function for the Si layer in crystallization so as to increase the super lateral growth length. Then, the laser beam is repeatedly moved to irradiate the substrate to finish the crystallization process for the full substrate.

Growing community of inventors

Hsinchu County, Taiwan

Hung-Tse Chen