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Gyeonggi-do, South Korea

Hung-Mo Yang

This inventor holds 11 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2002-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hung-Mo Yang. Retrieved from https://idiyas.com/inventor/hung-mo-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 11

% Patents Active = 100.0

Average Co-Inventor Count = 2.4

ph-index = 5

Forward Citations = 60(Granted Patents)


Location History:

  • Kyonggi-do, KR (2002)
  • Gyeonggi-do, KR (2007 - 2015)
  • Suwon-si, KR (2015 - 2018)

Company Filing History:

goldMedal11 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2002-2018

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11 patents (USPTO):Explore Patents
1. 9893190 - Fin FET and method of fabricating same (2018-02-13),
2. 9640665 - Fin FET and method of fabricating same (2017-05-02),
3. 9196733 - Fin FET and method of fabricating same (2015-11-24),
4. 9018697 - fin FET and method of fabricating same (2015-04-28),
5. 8264034 - Fin FET and method of fabricating same (2012-09-11),
6. 8053833 - Fin FET and method of fabricating same (2011-11-08),
7. 7868380 - Fin FET and method of fabricating same (2011-01-11),
8. 7494895 - Method of fabricating a three-dimensional MOSFET employing a hard mask spacer (2009-02-24),
9. 7436047 - Wafer having scribe lanes suitable for sawing process, reticle used in manufacturing the same, and method of manufacturing the same (2008-10-14),
10. 7217623 - Fin FET and method of fabricating same (2007-05-15),
11. 6365928 - Semiconductor memory storage electrode and method of making (2002-04-02),

Title: Inventor Hung-Mo Yang

Introduction: Hung-Mo Yang is a renowned inventor based in Gyeonggi-do, South Korea, known for his groundbreaking contributions to various fields.

Latest Patents: Hung-Mo Yang holds several patents in the areas of technology and engineering, showcasing his innovative mindset and problem-solving abilities.

Career Highlights: Throughout his career, Hung-Mo Yang has worked on numerous projects that have revolutionized industries, demonstrating his passion for pushing the boundaries of what is possible.

Collaborations: Hung-Mo Yang has collaborated with leading research institutions, universities, and companies worldwide, fostering a culture of innovation and knowledge-sharing.

Conclusion: In conclusion, Hung-Mo Yang's dedication to innovation and his remarkable achievements make him a standout figure in the world of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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