This inventor holds 2 USPTO granted patents. Top assignee: National Science Council. Active years: 2001.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Hsichu Hsien, TW (2001)
- Zhu Dong, TW (2001)
Company Filing History:
Years Active: 2001
Title: Innovations of Inventor Hung-Kwei Liao
Introduction
Hung-Kwei Liao is a notable inventor based in Hsichu Hsien, Taiwan. He has made significant contributions to the field of ion sensitive field effect transistors (ISFETs). With a total of 2 patents, his work focuses on enhancing the performance and feasibility of these devices.
Latest Patents
One of his latest patents involves an ion sensitive transistor. This invention discloses a method of forming a metal layer through thermal evaporation or RF reactive sputtering to create a light shielding layer for an ion sensitive field effect transistor. The multi-layered construction of this device includes SnO₂/metal/SiO₂ or SnO₂/metal/Si₃N₄/SiO₂, which effectively reduces the impact of light on the device's performance.
Another significant patent by Liao is the fabrication of a multi-structure ion sensitive field effect transistor with a pH sensing layer made of tin oxide thin film. This sensitive material, tin oxide (SnO₂), is utilized as a high-pH-sensitive material for the ISFET. The multi-structure design includes SnO₂/SiO₂ gate ISFET or SnO₂/Si₃N₄/SiO₂ gate ISFET, demonstrating impressive performance metrics. These include a linear pH sensitivity of approximately 56-58 mV/pH within a concentration range of pH 2 to pH 10, low drift characteristics of about 5 mV/day, and a response time of less than 0.1 seconds. The invention also boasts an inexpensive fabrication system, making it suitable for mass production.
Career Highlights
Hung-Kwei Liao is affiliated with the National Science Council, where he continues to innovate and contribute to advancements in technology. His work has garnered attention for its practical applications and cost-effectiveness.
Collaborations
Liao has collaborated with notable colleagues such as Jung-Chuan Chou and Shen-Kan Hsiung, further enhancing the impact of his research and inventions.
Conclusion
Hung-Kwei Liao's contributions to the field of ion sensitive field effect transistors highlight his innovative spirit and dedication to advancing technology. His patents reflect a commitment to improving device performance and accessibility, making significant strides in the
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile