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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6236075 B1

PDFFull Text
Date of Patent:
May. 22, 2001

Filed:

Mar. 10, 1999

Ion sensitive transistor

Applicant:
Inventors:

Shen-Kan Hsiung, Chung-Li, TW;

Jung-Chuan Chou, Yunlin Hsien, TW;

Tai-Ping Sun, Chung-Li, TW;

Wen Yaw Chung, Chung-Li, TW;

Hung-Kwei Liao, Hsichu Hsien, TW;

Chung-Lin Wu, Taipei, TW;

Assignee:

National Science Council, Taipei, TW;

Attorney:

Price And Gess

Primary Examiner:

William Mintel

Int. Cl.
CPC ...
H01L 2/358 ;
U.S. Cl.
CPC ...
H01L 2/358 ;
Abstract

The present invention discloses a method of forming a metal layer by thermal evaporation or RF reactive sputtering in order to fabricate a light shielding layer for an ion sensitive field effect transistor. The multi-layered construction of the ion sensitive field effect transistor with a metal thin film as a light shielding layer is SnO,/metal/SiO,or SnO,/metal/Si,N,/SiO,, and is able to lower the effect of light successfully.

Find Patent Forward Citations

Hsiung, Shen-Kan. (2001). Ion sensitive transistor (U.S. Patent No. 6236075). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6236075

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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