Taipei, Taiwan

Chung-Lin Wu

This inventor holds 1 USPTO granted patent. Top assignee: National Science Council. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chung-Lin Wu. Retrieved from https://idiyas.com/inventor/chung-lin-wu-rcrop5fh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Innovations of Chung-Lin Wu

Introduction

Chung-Lin Wu is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of electronics, particularly in the development of ion sensitive transistors. His work has implications for various applications in technology and research.

Latest Patents

Chung-Lin Wu holds a patent for an ion sensitive transistor. The patent describes a method of forming a metal layer through thermal evaporation or RF reactive sputtering to create a light shielding layer for an ion sensitive field effect transistor. The multi-layered construction of this transistor includes SnO₂/metal/SiO₂ or SnO₂/metal/Si₃N₄/SiO₂, which effectively reduces the impact of light on its performance. He has 1 patent to his name.

Career Highlights

Chung-Lin Wu is affiliated with the National Science Council, where he continues to engage in innovative research and development. His work has been instrumental in advancing the technology surrounding ion sensitive devices.

Collaborations

Some of his notable coworkers include Shen-Kan Hsiung and Jung-Chuan Chou. Their collaborative efforts contribute to the ongoing advancements in their respective fields.

Conclusion

Chung-Lin Wu's contributions to the field of ion sensitive transistors highlight his innovative spirit and dedication to research. His work continues to influence the development of advanced electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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