Hung Hsun Lin

Title: Innovations of Inventor Hung Hsun Lin

Introduction

Hung Hsun Lin is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. With a total of 3 patents to his name, Lin continues to push the boundaries of innovation in his industry.

Latest Patents

Hung Hsun Lin's latest patents focus on advanced semiconductor structures and devices. One of his notable inventions is a device that includes a substrate, a first conductive layer on the substrate, a first conductive via, and further conductive layers and conductive vias between the first conductive via and the substrate. The first conductive via is positioned between the substrate and the first conductive layer, establishing an electrical connection. This innovative design allows the first conductive via to extend through at least two dielectric layers, with a thickness greater than about 8 kilo-Angstroms. Additionally, an inductor with a high quality factor is formed in the first conductive layer, incorporating the first conductive via. Another patent details a method for forming a device with an extended via semiconductor structure, emphasizing similar components and functionalities.

Career Highlights

Hung Hsun Lin is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leader in the semiconductor industry. His work has been instrumental in developing cutting-edge technologies that enhance device performance and reliability.

Collaborations

Lin has collaborated with notable colleagues, including Che-Chih Hsu and Wen-Chu Huang, contributing to various projects that advance semiconductor technology.

Conclusion

Hung Hsun Lin's innovative work in semiconductor structures and devices showcases his expertise and commitment to advancing technology. His contributions are vital to the ongoing evolution of the semiconductor industry.