Taiwan Semiconductor Manufacturing Comp. Ltd.

Hung Hsun Lin

Yen-Yu Chen

Wen Han Hung

Che-Chih Hsu

Wei-Chun Hua

Chinyu Su

Wen-Chu Huang

A device includes a substrate, a first conductive layer on the substrate, a first conductive via, and further conductive layers and conductive vias between the first conductive via and the substrate. The first conductive via is between the substrate and the first conductive layer, and is electrically connected to the first conductive layer. The first conductive via extends through at least two dielectric layers, and has thickness greater than about 8 kilo-Angstroms. An inductor having high quality factor is formed in the first conductive layer and also includes the first conductive via.

Extended via semiconductor structure and device

Method for forming a device with an extended via semiconductor structure

Growing community of inventors

Hsinchu, Taiwan

Hung Hsun Lin