Hung-Hsin Shih

Title: Innovations of Hung-Hsin Shih in Energy Storage Technology.

Introduction

Hung-Hsin Shih is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of energy storage technology. His innovative work focuses on the development of advanced electrodes for energy storage elements.

Latest Patents

Hung-Hsin Shih holds a patent for an "Electrode of energy storage element and manufacturing method thereof." This patent describes a manufacturing method that involves providing a substrate into microwave plasma equipment. It includes introducing a carrier gas and a carbon precursor gas into the equipment. The process forms multi-layer graphene walls on the substrate through microwave plasma chemical vapor deposition. Additionally, the substrate containing the multi-layer graphene walls is immersed in an electrolyte solution for electrochemical activation treatment. This allows ions in the electrolyte solution to intercalate between adjacent graphene walls. The volume ratio of the carrier gas to the carbon precursor gas ranges from 1:10 to 10:1.

Career Highlights

Hung-Hsin Shih is associated with the Industrial Technology Research Institute, where he continues to advance research in energy storage technologies. His work has been pivotal in enhancing the efficiency and performance of energy storage systems.

Collaborations

He has collaborated with notable colleagues, including Kun-Ping Huang and Chi-Chang Hu, contributing to various projects and research initiatives in the field.

Conclusion

Hung-Hsin Shih's innovative contributions to energy storage technology highlight his role as a leading inventor in this domain. His patent on the manufacturing method of electrodes showcases the potential for advancements in energy storage solutions.