Taipei, Taiwan

Hung-Chang Chen

This inventor holds 2 USPTO granted patents and 3 published patent applications. Top assignee: Xintec Corporation. Active years: 2015-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hung-Chang Chen. Retrieved from https://idiyas.com/inventor/hung-chang-chen-ue071ko5

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 1.7

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Jhongli, TW (2015)
  • New Taipei, TW (2016)

Company Filing History:


Years Active: 2015-2016

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2 patents (USPTO):Explore Patents

Title: Innovations of Inventor Hung-Chang Chen

Introduction

Hung-Chang Chen is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology. With a total of 2 patents, his work focuses on enhancing semiconductor structures and their applications.

Latest Patents

One of his latest patents is titled "Semiconductor structure and manufacturing method thereof." This invention includes a semiconductor structure that comprises a substrate, a dam element, a first isolation layer, a second isolation layer, and a conductive layer. The substrate features a conductive pad, a trench, a sidewall, a first surface, and a second surface opposite to the first surface. The conductive pad is positioned on the second surface, while the trench has a first opening at the first surface and a second opening at the second surface. The dam element is located on the second surface and covers the second opening, featuring a concave portion at the second opening. The first isolation layer is situated on a portion of the sidewall, and the second isolation layer is located on the first surface and the sidewall that is not covered by the first isolation layer, forming an interface between the two layers.

Another significant patent is for a "Semiconductor element applicable to optical products." This invention includes a transparent substrate and a stack structure formed on the substrate, which has a metal oxide layer partially exposed through the sidewalls of the stack structure. A plurality of leads is formed on the stack structure, extending to the sidewalls, while an insulating film covers the exposed portions of the metal oxide layer. A metal film is formed on the leads, and a solder mask layer is disposed on the metal film, the stack structure, and the insulating film. This design prevents short circuits between adjacent leads, thereby improving product yield.

Career Highlights

Hung-Chang Chen is currently employed at Xintec Corporation, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices.

Collaborations

He collaborates with talented coworkers, including Chen-Mei Fan and Ho-Ku Lan, who contribute to the innovative environment at Xintec Corporation.

Conclusion

Hung-Chang Chen's contributions to semiconductor technology through his patents demonstrate his commitment to innovation and excellence in the field. His work not only enhances the functionality of semiconductor devices but also improves their reliability

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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