This inventor holds 1 USPTO granted patent. Top assignee: National Tsing Hua University. Active years: 2016.
Company Filing History:
Years Active: 2016
Title: Innovations of Inventor Hung-Bin Chen
Hung-Bin Chen is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs that enhance the efficiency of electronic components.
Latest Patents
Hung-Bin Chen holds a patent for a junction-less transistor having a reverse polarity structure. This invention includes a substrate, a semiconductor body, a gate, and a gate insulation layer. The substrate has a first polarity, while the semiconductor body, which is disposed on the substrate, includes a drain, a source, and a channel section connected between the drain and the source. The gate covers one side of the channel section away from the substrate. Notably, the semiconductor body has a second polarity that is opposite to the first polarity. This design effectively reduces leakage current and lowers production costs for electronic elements.
Career Highlights
Hung-Bin Chen is affiliated with Tsinghua University, where he continues to engage in research and development in semiconductor technologies. His work has garnered attention for its potential applications in various electronic devices.
Collaborations
He has collaborated with notable colleagues, including Yung-Chun Wu and Ming-Hung Han, contributing to advancements in their shared field of expertise.
Conclusion
Hung-Bin Chen's innovative work in junction-less transistors exemplifies the ongoing advancements in semiconductor technology. His contributions are paving the way for more efficient electronic components, showcasing the importance of innovation in this field.