The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2016

Filed:

Jan. 02, 2014
Applicant:

National Tsing Hua University, Hsinchu, TW;

Inventors:

Yung-Chun Wu, Hsinchu, TW;

Ming-Hung Han, Hsinchu, TW;

Hung-Bin Chen, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1095 (2013.01); H01L 29/78 (2013.01); H01L 29/785 (2013.01);
Abstract

A junction-less transistor having an reverse polarity structure includes a substrate, a semiconductor body, a gate and a gate insulation layer. The substrate has a first polarity. The semiconductor body is disposed on the substrate, and includes a drain, a source and a channel section connected between the drain and the source. The gate covers one side of the channel section away from the substrate. The semiconductor body has a second polarity opposite to the first polarity. With the semiconductor body and the substrate respectively having the opposite second polarity and first polarity, a leakage current can be reduced while also lowering element production costs.


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