Hun Woo Kye

Title: Innovations of Inventor Hun Woo Kye

Introduction

Hun Woo Kye is a notable inventor based in Icheon-si, South Korea. He has made significant contributions to the field of memory technology, particularly in dynamic random access memory (DRAM) systems. With a total of 3 patents to his name, Kye's work focuses on enhancing the efficiency and performance of memory devices.

Latest Patents

One of his latest patents is titled "Multiple valued dynamic random access memory cell and thereof array using single electron transistor." This invention provides a multi-valued DRAM cell utilizing a single electron transistor (SET). The design applies different refresh signals to a load current transistor, controlling the current supply to the SET and a voltage control transistor that manages the terminal voltage of the SET. This innovation refreshes the data value stored in the SET at predetermined intervals, reducing standby current and ensuring a stable voltage that meets the coulomb-blockade condition at the terminal of the SET. Another significant patent is the "Multiple-valued DRAM," which describes an MV DRAM device capable of storing multiple value levels using an SET device. This device includes various components such as word lines, bitlines, and a DRAM cell connected to their intersections, enhancing the overall functionality of memory storage.

Career Highlights

Hun Woo Kye has worked with reputable organizations, including Excel Semiconductor Inc. and Chungbuk National University Industry-Academic Cooperation Foundation. His experience in these institutions has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Kye has collaborated with notable colleagues such as Jung Bum Choi and Jong Bae Jeong. Their combined expertise has contributed to the advancement of memory technology and the successful development of Kye's patents.

Conclusion

Hun Woo Kye's contributions to the field of memory technology through his innovative patents demonstrate his commitment to advancing the capabilities of dynamic random access memory systems. His work continues to influence the industry and inspire future innovations.