The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2011
Filed:
Dec. 20, 2007
Multiple valued dynamic random access memory cell and thereof array using single electron transistor
Bok Nam Song, Gyeonggi-do, KR;
Jung Bum Choi, Cheongju-si, KR;
Hun Woo Kye, Yongin-si, KR;
NanoChips, Inc., , KR;
Abstract
Provided is a multi-valued dynamic random access memory (DRAM) cell using a single electron transistor (SET). The multi-valued DRAM cell using the SET applies different refresh signals to a load current transistor for controlling current supply to the SET and a voltage control transistor for controlling a terminal voltage of the SET and refreshes a data value stored in the SET by a predetermined period to reduce standby current and stably supply a voltage low enough to satisfy a coulomb-blockade condition to the terminal of the SET.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile