Gyeonggi-do, South Korea

Hun-Sung Lee

This inventor holds 2 USPTO granted patents. Top assignee: Skhynix Inc.. Active years: 2015-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hun-Sung Lee. Retrieved from https://idiyas.com/inventor/hun-sung-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2015-2016

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2 patents (USPTO):Explore Patents

Title: The Innovations of Inventor Hun-Sung Lee

Introduction

Hun-Sung Lee is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology. With a total of 2 patents, his work has had a considerable impact on the industry.

Latest Patents

Hun-Sung Lee's latest patents include a CMOS circuit and method for fabricating the same. This semiconductor device features a semiconductor substrate and a gate insulation layer formed over the substrate. A gate electrode is constructed over the gate insulation layer, which includes a silicon-containing electrode with a dopant. Additionally, it incorporates a capturing material to capture the dopant and an activation control material to manage the activation of the dopant.

Career Highlights

Hun-Sung Lee is currently employed at SK Hynix Inc., a leading company in the semiconductor industry. His work at SK Hynix has allowed him to further develop his innovative ideas and contribute to cutting-edge technology.

Collaborations

Throughout his career, Hun-Sung Lee has collaborated with esteemed colleagues such as Shang-Koon Na and Kyong-Bong Rouh. These collaborations have fostered a creative environment that has led to advancements in semiconductor technology.

Conclusion

In summary, Hun-Sung Lee is a prominent inventor whose work in semiconductor technology has resulted in valuable patents and collaborations. His contributions continue to shape the future of the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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