The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Feb. 10, 2015
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Kyong-Bong Rouh, Gyeonggi-do, KR;
Shang-Koon Na, Gyeonggi-do, KR;
Mi-Ri Lee, Gyeonggi-do, KR;
Hun-Sung Lee, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 21/225 (2006.01); H01L 21/28 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823814 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/2251 (2013.01); H01L 21/28035 (2013.01); H01L 21/324 (2013.01); H01L 21/8238 (2013.01); H01L 21/823828 (2013.01); H01L 21/823842 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate and a gate insulation layer formed over the semiconductor substrate. A gate electrode is formed over the gate insulation layer. The gate electrode includes a silicon-containing electrode including a dopant, a capturing material to capture the dopant, and an activation control material to control an activation of the dopant.