Taipei, Taiwan

Hun-Hsin Chang

This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hun-Hsin Chang. Retrieved from https://idiyas.com/inventor/hun-hsin-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 16(Granted Patents)


Company Filing History:


Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: Unveiling the Innovations of Inventor Hun-Hsin Chang from Taipei

Introduction: Inventor Hun-Hsin Chang, based in Taipei, has contributed significantly to the field of semiconductor technology with his groundbreaking patents and inventive designs. His innovative spirit and dedication to enhancing ESD protection have made him a respected figure in the industry.

Latest Patents: With a total of 1 patent to his name, Hun-Hsin Chang's notable invention titled "Output ESD Protection Using Dynamic-Floating-Gate Arrangement" revolutionizes the ESD robustness of driving-current-programmable CMOS output buffers in cell libraries. By creatively utilizing a dynamic-floating-gate arrangement, he has elevated the reliability and performance of semiconductor devices.

Career Highlights: Currently employed at Taiwan Semiconductor Manufacturing Company Ltd., Hun-Hsin Chang continues to push the boundaries of semiconductor technology. His expertise and passion for innovation have propelled him to the forefront of ESD protection solutions in the industry.

Collaborations: Throughout his career, Hun-Hsin Chang has collaborated with esteemed colleagues such as Ming-Dou Ker and Kuo-Tsai Lee. Together, they have championed technological advancements and shared expertise to drive the evolution of semiconductor designs.

Conclusion: Hun-Hsin Chang's journey as an inventor showcases his commitment to pushing the boundaries of semiconductor technology. His inventive solutions and collaborative spirit have left a lasting impact on the industry, setting a high standard for innovation and excellence.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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