Hangzhou, China

Huitao Fan

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignees: Zhejiang Hengyi High-Tech Materials Co., Ltd., Zhejiang Hengyi Petrochemical Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Huitao Fan. Retrieved from https://idiyas.com/inventor/huitao-fan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Huitao Fan: Patent Work in AI-Based Image Processing

Introduction

Huitao Fan is an inventor based in Hangzhou, China. His patent work includes a method for processing sample data that applies artificial intelligence techniques to image processing and computer vision. The provided information lists 1 patent associated with him.

Latest Patents

Fan’s patent, “Method for Processing Sample Data, Electronic Device and Storage Medium,” describes a way to identify defect images of a spinning box. The method obtains multiple working images and compares each image with a normal image of the box. When the difference meets a specified condition, the working image is identified as a defect image. The defect images are then used to create a sample data set.

The invention is intended to support the preparation of sample data for image-processing and computer-vision applications.

Career Highlights

Fan’s listed company affiliations include Zhejiang Hengyi Petrochemical Co., Ltd. and Zhejiang Hengyi High-Tech Materials Co., Ltd. His patent connects industrial inspection with artificial intelligence-based image analysis.

Collaborations

The provided information names Xiantao Peng and Peng Wang as Fan’s coworkers.

Conclusion

Huitao Fan’s listed patent focuses on identifying defects in spinning-box images and organizing them into sample data, bringing together industrial inspection and computer-vision technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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