Beijing, China

Huilin Ma


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2016

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2 patents (USPTO):Explore Patents

Title: Huilin Ma: Innovator in Flash Memory Technology

Introduction

Huilin Ma is a prominent inventor based in Beijing, China. She has made significant contributions to the field of semiconductor technology, particularly in the development of flash memory devices. With a total of 2 patents to her name, her work has been instrumental in advancing memory manufacturing techniques.

Latest Patents

Huilin Ma's latest patents include a method of manufacturing an embedded split-gate flash memory device. This innovative method involves several steps, such as performing shallow trench isolation and chemical mechanical planarization on a semiconductor substrate. The process also includes forming a first photoresist over the logic region and depositing a floating gate polysilicon material. Another notable patent is related to a flash memory device and its manufacturing method, which outlines the creation of a substrate structure that includes various layers and control gates.

Career Highlights

Huilin Ma is currently employed at Semiconductor Manufacturing International Corporation, where she continues to push the boundaries of semiconductor technology. Her expertise in flash memory manufacturing has positioned her as a key player in the industry.

Collaborations

Throughout her career, Huilin has collaborated with notable colleagues, including Liqun Zhang and Lei Zhang. These partnerships have fostered innovation and contributed to the success of her projects.

Conclusion

Huilin Ma's contributions to the field of flash memory technology exemplify her dedication to innovation and excellence. Her patents reflect her expertise and commitment to advancing semiconductor manufacturing processes.

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