Nanjing, China

Huijie Zhuang

This inventor holds 1 USPTO granted patent. Top assignees: Jiangsu Hhck Advanced Materials Co., Ltd., Nanjing University. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Huijie Zhuang. Retrieved from https://idiyas.com/inventor/huijie-zhuang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Huijie Zhuang: Innovator in Metal-Resin Composites

Introduction

Huijie Zhuang is a notable inventor based in Nanjing, China. He has made significant contributions to the field of materials science, particularly in the development of advanced composites for high-frequency and high-speed signal transmission.

Latest Patents

Zhuang holds a patent for a "Metal-resin composite, surface treatment method, and substrate of circuit board for high-frequency and high-speed signal transmission." This innovative patent describes a metal-resin composite that includes a surface-treated metal featuring a nano-scale pore array. The structure allows for enhanced bonding strength between the resin and metal substrate, improving the performance of printed circuit boards.

Career Highlights

Throughout his career, Huijie Zhuang has worked with esteemed institutions such as Nanjing University and Jiangsu Hhck Advanced Materials Co., Ltd. His work has focused on enhancing the properties of materials used in electronic applications.

Collaborations

Zhuang has collaborated with notable colleagues, including Wei Chen and Qi Xue, who have contributed to his research endeavors.

Conclusion

Huijie Zhuang's innovative work in metal-resin composites showcases his commitment to advancing technology in high-frequency applications. His contributions are paving the way for improved electronic materials and performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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