Suwon-si, South Korea

Huije Ryu

USPTO Granted Patents = 2 

 

Average Co-Inventor Count = 6.5

ph-index = 1


Company Filing History:


Years Active: 2025

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2 patents (USPTO):Explore Patents

Title: Huije Ryu: Innovator in Semiconductor Memory Technology

Introduction

Huije Ryu is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor memory devices, holding a total of 2 patents. His work focuses on enhancing the efficiency and functionality of memory technology, which is crucial for modern electronic devices.

Latest Patents

Ryu's latest patents include innovative designs for semiconductor memory devices. One of his patents describes a semiconductor memory device that features a substrate, a conductive line, and an isolation insulating layer with a channel trench. This design incorporates a channel structure, a gate electrode, and a capacitor structure, all aimed at improving memory performance. Another patent details a semiconductor memory device that includes a shield layer between the peripheral circuit and cell array structures. This invention enhances the overall functionality and reliability of semiconductor devices.

Career Highlights

Huije Ryu is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to be at the forefront of semiconductor innovation, contributing to the development of advanced memory solutions.

Collaborations

Ryu has collaborated with notable colleagues, including Sungwon Yoo and Yongjin Lee. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas in the semiconductor field.

Conclusion

Huije Ryu's contributions to semiconductor memory technology are noteworthy, and his patents reflect his commitment to advancing this critical area of electronics. His work continues to influence the development of more efficient and reliable memory devices.

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