The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Jan. 04, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sungwon Yoo, Suwon-si, KR;
Yongseok Kim, Suwon-si, KR;
Min Tae Ryu, Suwon-si, KR;
Huije Ryu, Suwon-si, KR;
Yongjin Lee, Suwon-si, KR;
Wonsok Lee, Suwon-si, KR;
Min Hee Cho, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a substrate, a gate electrode on the substrate, a channel layer between the substrate and the gate electrode, a source electrode in contact with a first sidewall of the channel layer, and a drain electrode in contact with a second sidewall of the channel layer. The second sidewall is opposite to the first sidewall. The channel layer includes a first channel pattern in contact with one of the source electrode and the drain electrode, and a second channel pattern between the first channel pattern and the gate electrode. The first channel pattern and the second channel pattern includes oxide semiconductor materials different from each other. A portion of the source electrode and a portion of the drain electrode overlap a portion of the gate electrode.