Company Filing History:
Years Active: 2025
Title: Huihua Jiang: Innovator in Semiconductor Technology
Introduction
Huihua Jiang is a prominent inventor based in Singapore, known for his contributions to semiconductor technology. He has made significant strides in the field, particularly with his innovative patent that addresses the design of extended-drain metal-oxide-semiconductor devices.
Latest Patents
Huihua Jiang holds a patent for "Extended-drain metal-oxide-semiconductor devices with a gap between the drain and body wells." This invention includes structures for an extended-drain metal-oxide-semiconductor device and methods of forming such structures. The design features a semiconductor substrate, a body well within the substrate, a source region in the body well, a drain well in the substrate, a drain region in the drain well, and a gate electrode positioned laterally between the source and drain regions. Notably, the drain well has an edge adjacent to the body well, maintaining a spaced relationship with it. He has 1 patent to his name.
Career Highlights
Huihua Jiang is currently employed at Globalfoundries Singapore Pte. Ltd., where he continues to advance his research and development efforts in semiconductor technologies. His work has been instrumental in enhancing the performance and efficiency of semiconductor devices.
Collaborations
Huihua has collaborated with notable colleagues, including Bong Woong Mun and Upinder Singh, contributing to various projects and innovations within the semiconductor industry.
Conclusion
Huihua Jiang's contributions to semiconductor technology, particularly through his patented innovations, highlight his role as a key figure in the field. His work at Globalfoundries Singapore Pte. Ltd. continues to influence advancements in semiconductor devices.