Hui Pan

Title: Hui Pan - Innovator in Infrared Detection Technology

Introduction

Hui Pan is a notable inventor based in Beijing, China. He has made significant contributions to the field of infrared detection technology. His innovative work has led to the development of a unique infrared detector that utilizes a multi-layer structure based on a CMOS process.

Latest Patents

Hui Pan holds a patent for an "Infrared detector with multi-layer structure based on CMOS process." This invention features a CMOS measuring circuit system and a CMOS infrared sensing structure, both fabricated using the CMOS process. The manufacturing process includes a metal interconnection process, a through hole process, an IMD process, and an RDL process. The detector's multi-layer structure consists of a first columnar structure with solid and/or hollow columnar layers, and a second columnar structure with similar features. Additionally, it incorporates hole-shaped structures in an absorption plate that penetrate a dielectric layer, enhancing its functionality.

Career Highlights

Hui Pan has worked with Beijing North Gaoye Technology Co., Ltd., where he has applied his expertise in developing advanced technologies. His work in this company has been instrumental in pushing the boundaries of infrared detection.

Collaborations

Hui Pan has collaborated with notable colleagues, including Guangjie Zhai and Pei Wu, who have contributed to his projects and innovations.

Conclusion

Hui Pan's contributions to infrared detection technology exemplify the impact of innovative thinking in the field of electronics. His patent reflects a significant advancement in the design and functionality of infrared detectors.