The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Mar. 24, 2022
Beijing North Gaoye Technology Co., Ltd., Beijing, CN;
Guangjie Zhai, Beijing, CN;
Pei Wu, Beijing, CN;
Hui Pan, Beijing, CN;
Guangqiang Zhai, Beijing, CN;
Beijing North Gaoye Technology Co., Ltd., Beijing, CN;
Abstract
An infrared detector with a multi-layer structure based on a CMOS process. A CMOS measuring circuit system and a CMOS infrared sensing structure in the infrared detector are both fabricated by using the CMOS process, and a CMOS manufacturing process comprises a metal interconnection process, a through hole process, an IMD process and an RDL process. In the infrared detector with the multi-layer structure, a first columnar structure comprises at least one layer of solid columnar structure and/or at least one layer of hollow columnar structure, a second columnar structure comprises at least one layer of solid columnar structure and/or at least one layer of hollow columnar structure, at least one hole-shaped structure is formed in an absorption plate, and the hole-shaped structure at least penetrates a dielectric layer in the absorption plate; and/or, at least one hole-shaped structure is formed in a beam structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile