Guangqiang Zhai

Title: Innovations of Guangqiang Zhai in Infrared Detection Technology.

Introduction

Guangqiang Zhai is a notable inventor based in Beijing, China. He has made significant contributions to the field of infrared detection technology. His innovative work has led to the development of a unique infrared detector that utilizes a multi-layer structure based on a CMOS process.

Latest Patents

Guangqiang Zhai holds a patent for an "Infrared detector with multi-layer structure based on CMOS process." This invention features a CMOS measuring circuit system and a CMOS infrared sensing structure, both fabricated using the CMOS process. The manufacturing process includes a metal interconnection process, a through hole process, an IMD process, and an RDL process. The detector's multi-layer structure consists of a first columnar structure with solid and/or hollow columnar layers, and a second columnar structure with similar features. Additionally, it incorporates hole-shaped structures in an absorption plate that penetrate a dielectric layer, enhancing its functionality.

Career Highlights

Throughout his career, Guangqiang Zhai has worked with Beijing North Gaoye Technology Co., Ltd. His experience in this company has contributed to his expertise in the field of infrared technology.

Collaborations

Guangqiang Zhai has collaborated with notable individuals such as Guangjie Zhai and Pei Wu. Their joint efforts have further advanced the research and development of innovative technologies.

Conclusion

Guangqiang Zhai's contributions to infrared detection technology exemplify the impact of innovative thinking in engineering. His patent reflects a significant advancement in the field, showcasing the potential of CMOS processes in creating efficient infrared detectors.