Hui-Min Chuang

Title: Innovations by Hui-Min Chuang

Introduction

Hui-Min Chuang is a notable inventor based in Hillsboro, OR (US). He has made significant contributions to the field of semiconductor technology, particularly in the design of thin film transistors (TFTs). His innovative approaches have the potential to enhance the performance of memory structures in electronic devices.

Latest Patents

Hui-Min Chuang holds a patent titled "Dielectric sidewall features for tuning thin film transistor (TFT) parasitics." This patent focuses on techniques for forming transistor devices with reduced parasitic capacitance, which is crucial for improving the efficiency of memory structures. The invention describes a memory structure that includes memory cells, where each cell has an access device, such as a thin film transistor, and a storage device, like a capacitor. The patent details the incorporation of a dielectric liner along the sidewalls of the TFT, which helps to minimize parasitic capacitance and protect the contacts from excessive penetration into the semiconductor region.

Career Highlights

Hui-Min Chuang is currently employed at Intel Corporation, a leading technology company known for its advancements in semiconductor manufacturing. His work at Intel has allowed him to collaborate with other talented professionals in the field, contributing to the development of cutting-edge technologies.

Collaborations

Some of Hui-Min Chuang's coworkers include Cheng Tan and Yu-Wen Huang. Their collaborative efforts have likely played a role in the successful development of innovative technologies within the company.

Conclusion

Hui-Min Chuang's contributions to the field of semiconductor technology, particularly through his patent on dielectric sidewall features, demonstrate his commitment to innovation. His work at Intel Corporation and collaborations with fellow inventors highlight the importance of teamwork in advancing technology.