Hui-Lun Chen

Title: Innovations by Hui-Lun Chen in Semiconductor Technology

Introduction

Hui-Lun Chen is a notable inventor based in I Lan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication processes of silicon-based devices. His innovative methods have paved the way for advancements in the industry.

Latest Patents

Hui-Lun Chen holds a patent for a method of forming a barrier layer for tungsten plugs in interlayer. This invention addresses the issue of tungsten plug loss during the fabrication of silicon-based semiconductor devices that utilize tungsten plugs in high aspect ratio contact holes. The method involves creating a barrier layer by first forming a conformal layer of titanium nitride through chemical vapor deposition. Subsequently, an additional film of titanium nitride is applied using plasma vapor deposition. This barrier layer consists of at least these two films, allowing for the deposition of tungsten to effectively fill the high aspect ratio film-coated contact hole. The process ensures that upon removal of excess tungsten through wet etch back, the tungsten plug remains largely intact, significantly reducing plug loss compared to prior art.

Career Highlights

Hui-Lun Chen is associated with Worldwide Semiconductor Manufacturing Corporation, where he continues to contribute to advancements in semiconductor technology. His work has been instrumental in improving the efficiency and reliability of semiconductor devices.

Collaborations

Hui-Lun Chen has collaborated with notable colleagues such as Wen-Yu Ho and Sen-Nan Lee. Their combined expertise has further enhanced the innovative processes within the semiconductor industry.

Conclusion

Hui-Lun Chen's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work not only addresses critical challenges but also sets a foundation for future developments in semiconductor fabrication.