Location History:
- Rancho Palos Verdes, CA (US) (1994 - 2000)
- Palos Verdes Estates, CA (US) (1999 - 2000)
Company Filing History:
Years Active: 1994-2000
Title: Innovations of Hugo W Chan
Introduction
Hugo W Chan is a prominent inventor based in Rancho Palos Verdes, California. He has made significant contributions to the field of superconductivity, holding a total of 12 patents. His work focuses on advanced methods for creating high-temperature superconducting junctions and low-inductance resistors.
Latest Patents
One of his latest patents is titled "Method of making high-T.sub.c SSNS and SNS Josephson junction." This patent discloses a high-temperature superconductor junction and outlines a method for forming it. The junction consists of a first high-T.sub.c superconductive layer on a substrate, with a dielectric layer on top. The design includes a ramp edge that facilitates the formation of a trilayer SNS structure, which is essential for creating an SSNS junction. Another notable patent is "Method of fabricating a low-inductance in-line resistor." This patent describes a process for creating a low-inductance resistor by depositing a superconductive layer on a base layer and converting an interconnect region into a resistor material region.
Career Highlights
Hugo W Chan has had a successful career at TRW Limited, where he has been instrumental in developing innovative technologies in superconductivity. His expertise in the field has led to numerous advancements that have practical applications in various industries.
Collaborations
Throughout his career, Chan has collaborated with notable colleagues, including Arnold H Silver and James M Murduck. These collaborations have contributed to the success of his projects and the advancement of superconducting technologies.
Conclusion
Hugo W Chan's contributions to the field of superconductivity through his patents and collaborations highlight his role as a leading inventor. His innovative methods continue to influence the development of advanced technologies in this area.