Hugo R G Burke

Title: Innovations of Hugo R G Burke

Introduction

Hugo R G Burke is a notable inventor based in Wales, GB, recognized for his contributions to semiconductor technology. With a total of six patents to his name, Burke has made significant advancements in the field, particularly in the design and functionality of power semiconductor devices.

Latest Patents

Among his latest patents is a semiconductor device featuring a gate contact on one surface that is electrically connected to a gate bus on an opposing surface. This innovative design utilizes a conductive body that extends through a via between the two surfaces of the device. Another notable patent involves a laser-ablated wafer for semiconductor devices, such as MOSFETs, aimed at achieving lower electrical resistance. This method includes forming first holes, slots, or trenches on a first surface of the wafer and focusing a laser beam to create second trenches on the bottom surface. The trenches are then filled with materials like aluminum to provide conductive electrodes for the semiconductor device.

Career Highlights

Hugo R G Burke is currently associated with International Rectifier Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing devices that enhance performance and efficiency in various applications.

Collaborations

Burke has collaborated with notable colleagues, including David Paul Jones and Robert J Montgomery, contributing to a dynamic environment of innovation and research.

Conclusion

Hugo R G Burke's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the field. His work continues to influence advancements in power semiconductor devices, showcasing the importance of innovation in technology.