Luzhu, Taiwan

Huei-Ru Liu

This inventor holds 5 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2014-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Huei-Ru Liu. Retrieved from https://idiyas.com/inventor/huei-ru-liu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.2

ph-index = 2

Forward Citations = 17(Granted Patents)


Company Filing History:


Years Active: 2014-2019

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5 patents (USPTO):Explore Patents

Title: **Innovations of Inventor Huei-Ru Liu in Lateral MOSFET Technology**

Introduction

Huei-Ru Liu, an accomplished inventor based in Luzhu, Taiwan, has made significant contributions to the field of semiconductor technology. With a total of five patents to his name, Liu is known for his innovative approaches to the design and fabrication of lateral MOSFETs, a crucial component in the advancement of electronic devices.

Latest Patents

Among Liu's latest patented inventions in the area of lateral MOSFET technology are two notable methods. The first patent describes a process that involves forming a first isolation region in a substrate, where the top surface of this region is lower than that of the substrate. This method includes depositing a gate electrode layer and patterning it to create first and second gate electrode regions, the latter vertically aligned with the first isolation region and adjacent to the first gate electrode region.

The second patent outlines a different method for forming a lateral MOSFET. In this approach, the first isolation region's top surface is level with the substrate's top surface initially. Subsequently, an upper portion of this isolation region is removed to create a recess. A gate dielectric layer is then deposited, followed by a gate electrode layer, which is patterned to form a gate electrode region. The first part of this region aligns with the first isolation region, while a second part is formed over the substrate, ensuring that the top surface of the first portion is lower than that of the second portion.

Career Highlights

Huei-Ru Liu works at Taiwan Semiconductor Manufacturing Company Limited, a leading entity in the semiconductor fabrication industry. His innovative work in the field has been instrumental in enhancing the performance and efficiency of semiconductor devices. Through his patents, Liu has proven to be a key innovator who bridges theoretical knowledge with practical applications.

Collaborations

Liu collaborates with talented colleagues such as Chien-Chih Chou and Kong-Beng Thei. Their joint efforts in the research and development of semiconductor technologies have led to groundbreaking advancements in lateral MOSFETs, showcasing the importance of teamwork in driving innovation forward.

Conclusion

Huei-Ru Liu's contributions to lateral MOSFET technologies reflect the dynamic nature of semiconductor innovation. Through his patents and collaborations, he continues to push the boundaries of technology, significantly impacting the future of electronic devices. As the field evolves, Liu’s work remains at the forefront, setting the stage for more advancements in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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