Hefei, China

Huangxia Zhu

This inventor holds 1 USPTO granted patent. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Huangxia Zhu. Retrieved from https://idiyas.com/inventor/huangxia-zhu-2qdcp2ps

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Innovations of Huangxia Zhu in OTP Memory Technology

Introduction

Huangxia Zhu is a prominent inventor based in Hefei, China. He has made significant contributions to the field of memory technology, particularly with his work on One Time Programmable (OTP) memory. His innovative approach has led to advancements that are crucial for modern electronic devices.

Latest Patents

Huangxia Zhu holds a patent for an OTP memory and method for manufacturing thereof, as well as an OTP circuit. This technology features a memory cell that includes two series diodes functioning as a fuse structure. This design enhances the efficiency and reliability of memory storage solutions.

Career Highlights

Huangxia Zhu is currently employed at Changxin Memory Technologies, Inc., where he continues to develop cutting-edge memory technologies. His work has positioned him as a key figure in the advancement of OTP memory solutions.

Collaborations

Huangxia Zhu collaborates with talented professionals in his field, including Xiong Li and Peng Feng. Their combined expertise fosters an environment of innovation and creativity, driving forward the development of new technologies.

Conclusion

Huangxia Zhu's contributions to OTP memory technology exemplify the impact of innovative thinking in the electronics industry. His work not only advances memory technology but also sets the stage for future developments in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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