Huang-Sheng Ho

Title: Innovations of Huang-Sheng Ho in Semiconductor Technology

Introduction

Huang-Sheng Ho is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of strained-channel devices. With a total of 2 patents to his name, his work has had a notable impact on integrated circuit (IC) device performance.

Latest Patents

Huang-Sheng Ho's latest patents focus on the fabrication of strained-channel semiconductor devices. One of the key methods he has developed involves controlling IC device strain through a specific process. This exemplary embodiment includes receiving an IC device substrate that has a device region corresponding to an IC device. An implantation process is performed on the device region, forming an amorphous region within it. The IC device substrate is then recessed to define a source/drain recess in the device region, with a profile determined by the amorphous structure of the amorphous region. Following this, a source/drain epitaxy is performed to create a source/drain structure within the recess.

Career Highlights

Huang-Sheng Ho is currently associated with Taiwan Semiconductor Manufacturing Company Limited, a leading player in the semiconductor industry. His work at this esteemed company has allowed him to push the boundaries of semiconductor fabrication techniques.

Collaborations

Throughout his career, Huang-Sheng Ho has collaborated with notable colleagues, including Chun-Fai Cheng and Bwo-Ning Chen. These collaborations have further enriched his research and development efforts in semiconductor technology.

Conclusion

Huang-Sheng Ho's innovative approaches to semiconductor device fabrication exemplify the advancements in the field. His contributions continue to influence the development of more efficient and effective IC devices.