The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
May. 11, 2012
Chun-fai Cheng, Tin Shui Wai, HK;
Bwo-ning Chen, Keelung, TW;
Chin-te Su, Longtan Township, Taoyuan County, TW;
Huang-sheng Ho, Hsin-Chu, TW;
Chun-Fai Cheng, Tin Shui Wai, HK;
Bwo-Ning Chen, Keelung, TW;
Chin-Te Su, Longtan Township, Taoyuan County, TW;
Huang-Sheng Ho, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for controlling IC device strain and the devices thereby formed are disclosed. An exemplary embodiment includes receiving an IC device substrate having a device region corresponding to an IC device. An implantation process is performed on the device region forming an amorphous region within the device region. The IC device substrate is recessed to define a source/drain recess in the device region having a profile determined by the amorphous structure of the amorphous region. A source/drain epitaxy is then performed to form a source/drain structure within the source/drain recess.