Huan Chi Ma

Title: Huan Chi Ma: Innovator in Semiconductor Technology

Introduction

Huan Chi Ma is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative designs and methods. His work has been recognized for its potential to enhance the performance of electronic devices.

Latest Patents

Huan Chi Ma holds a patent for a semiconductor device and method of forming the same. This patent describes a semiconductor device that includes an enhancement mode (E-mode) high electron mobility transistor (HEMT). The E-mode HEMT features a substrate with a channel layer disposed on it, along with a barrier structure on the channel layer. Additionally, it includes a pair of source/drain (S/D) metals positioned on opposite sides of the barrier structure, and a gate metal situated between the S/D metals. Notably, the channel layer contains a two-dimensional electron gas (2DEG) layer near the interface with the barrier structure, with a higher fluorine ion concentration adjacent to the 2DEG layer compared to areas further away.

Career Highlights

Huan Chi Ma is associated with United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to focus on advancing semiconductor technologies and contributing to the development of high-performance electronic components.

Collaborations

Huan Chi Ma has collaborated with notable colleagues, including Kuan-Ting Lin and Ying Jie Huang. These partnerships have fostered innovation and have been instrumental in the development of cutting-edge semiconductor solutions.

Conclusion

Huan Chi Ma's contributions to semiconductor technology exemplify the impact of innovative thinking in the electronics field. His patent for the E-mode HEMT showcases his commitment to advancing technology and improving device performance.