Cerritos, CA, United States of America

Huai-Min Sheng

This inventor holds 1 USPTO granted patent. Top assignee: Northrop Grumman Systems Corporation. Active years: 2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Huai-Min Sheng. Retrieved from https://idiyas.com/inventor/huai-min-sheng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2007

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1 patent (USPTO):Explore Patents

Title: Huai-Min Sheng: Innovator in Semiconductor Technology

Introduction

Huai-Min Sheng is a notable inventor based in Cerritos, CA (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to dry etching processes.

Latest Patents

Huai-Min Sheng holds a patent for a dry etching process for compound semiconductors. This invention focuses on a dry etching process that utilizes a halogen etchant and nitrogen gas to selectively etch compound semiconductor materials at a faster rate than the front-side metal layers. The process is designed to produce a vertical wall profile on the compound semiconductor material in both X and Y crystalline directions, effectively avoiding undercutting at the top of a via-opening.

Career Highlights

Huai-Min Sheng is currently employed at Northrop Grumman Systems Corporation, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor manufacturing processes.

Collaborations

Some of his coworkers include Jennifer Wang and Mike Barsky, who contribute to the innovative environment at Northrop Grumman Systems Corporation.

Conclusion

Huai-Min Sheng's contributions to semiconductor technology through his patented dry etching process highlight his role as an influential inventor in the field. His work continues to impact the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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